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Jingyun Huang
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Jingyun Huang

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Office: Love Building room 173
Telephone: N/A
Fax: 404-894-9140
Email: jhuang8@mail.gatech.edu
Mailing Address: School of Materials Science and Engineering
Georgia Institute of Technology
771 Ferst Dr. N.W.
Atlanta, GA 30332
Biosketch | Research Area | Publications | Highlights | Honors

Biosketch

  • Postdoc in department of chemistry and chemical biology, Harvard University, 2004.
  • Associate Professor in State Key Laboratory of Silicon Materials, Zhejiang University, 2001.
  • Lecture in State Key Laboratory of Silicon Materials, Zhejiang University, 2000.
  • Ph.D., Semiconductor Material in State Key Laboratory of Silicon Materials, Zhejiang University 2000.
  • Master of Engineering, Semiconductor Material in State Key Laboratory of Silicon Materials, Zhejiang University, 1997.
  • Technician in Henan diesel factory 1994.
  • Bachelor of Science, Theory Physics in Department of Physics, Jilin University, 1990.

Research Area

  • Semiconductor films or quantum materials growth and characterization.
  • Microelectronic, optoelectronic materials and devices.
  • Nano-structure and nano-electronics.

Publications

  1. "Controlled Replication of Butterfly Wings for Achieving Tunable Photonic Properties", J.Y. Huang, X.D. Wang and Z.L. Wang Nano Lett., 2006 (6) 2325-2331.
  2. "Photoluminescence of Ge quantum dots prepared on porous silicon by ultrahigh vacuum chemical deposition" Jingyun Huang, Zhizhen Ye, Binghui Zhao, et al., , Appl. Phys. Lett. 78, (2001)1858.
  3. “ZnO p-n homojunctions and ohmic contacts to Al-N-co-doped p-type ZnO”, Zhuge F, Zhu LP, Ye ZZ, Ma DW, Lu JG, Huang JY, Wang FZ, Ji ZG, Zhang SB, Appl. Phys. Lett. 87, (2005) Art No. 092103.
  4. “Calculation of Critical Layer Thickness Considering Thermal Strain in Si1-xGex/Si Strain-layer Heterostructur” Jingyun Huang, Zhizhen Ye, Luanming Lu and Duanlin Que, J. of Appl. Phys. 83, (1998)171.
  5. “Comparison of GaN epitaxial films on silicon nitride buffer and Si (111)”, Jingyun Huang, Zhizhen Ye, Lei Wang et al., Solid State Electronics, 46,(2002)1231
  6. “p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p-n homojunctions”, Lu JG, Zhu LP, Ye ZZ, ZHUGE F, HUANG JY, WANG L, YUAN J. J. of Crystal Growth 283 (3-4): 413-417 (2005)
  7. “P-type Zno thin films fabricated by Al-N co-doping method at different substrate temperature”, Yuan GD, Ye ZZ, Qian Q, ZHU LP, HUANG JY, ZHAO BH. J. of Crystal Growth 273 (3-4): 451-457 JAN 3 2005
  8. “Gold schottky contacts on n-type ZnO thin films with an Al/Si (100) substrate”, Guodong Yuan, Zhizhen Ye, Liping Zhu, Jingyun Huang, Qing Qian, Binghui Zhao, J. of Crystal Growth 268 : 169-173 (2004).
  9. “Electrical and optical properties of Al-N co-doped p-type zinc oxide films”, Fei Zhu-ge, Zhi-Zhen Ye, Li-Ping Zhu. Jian-Guo Lv, Bing-Hui Zhao, Jing-Yun Huang, J. of Crystal Growth 268 : 163-1168 (2004).
  10. “Preparation of p-type ZnO films by Al plus N-codoping method”, Ye ZZ, Fei ZG, Lu JG, Zhang ZH, Zhu LP, Zhao BH, Huang JY, J. of Crystal Growth 265 : 127-132 (2004).
  11. “Low-pressure MOCVD growth of p-type ZnO thin films by using NO as the dopant source”, Xu WZ, Ye ZZ, Zhou T, Zhao BH, Zhu LP, Huang JY, J. of Crystal Growth 265: 133-136 2004.
  12. “Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates”, Zhizhen Ye, Dewei Ma, Junhui He, Jingyun Huang, Bighui Zhao, XD Luo, ZY Xu, J. Crystal Growth, 256, (2003)78.
  13. “Preparation and characteristics of p-type ZnO films by DC reactive magnetron sputtering”, Ye ZZ, Lu JG, Chen HH, Zhang YZ, Wang L, Zhao BH, Huang JY, J. of Crystal Growth, 253, (2003)258.
  14. “Growth and investigation of SiGe film on buried Ge islands”, Jingyun Huang, Zhizhen Ye, Weihua Chen, Zhen Qi, Huanming Lu, Wang Lei, Binhui Zhao, Duanlin Que, J. of Crystal growth, 206, (1999)294.
  15. “Strain relaxation in graded SiGe grown by ultra-high vacuum chemical vapor deposition (UHV/CVD)”. H. Z. Wu, J. Y. Huang, Z. Z. Ye, X. B. Jiang, X. Shou, D. L. Que, J. of Crystal Growth, 191, (1998)72.
  16. “Area preferential nucleation of Ge nano-dots on nano-size porous silicon”, Jingyun Huang, Zhizhen Ye, Haiyan Zhang, Xianfeng Ni, Materials Research Bulletin, 37, (2002)793.
  17. “Effects of growth ambient on electrical properties of Al-N co-doped p-type ZnO films”, Zhuge F, Zhu LP, Ye ZZ, Lu JG, Zhao BH, Huang JY, Wang L, Zhang ZH, Ji ZG. Thin Solid Films, 476 (2): 272-275 APR 8 2005
  18. “Structural and photoluminescence properties of Zn0.8Mg0.2O thin films grown on Si substrate by pulsed laser deposition”, Yinzhu Zhang, Junhui He, Zhizhen Ye, Lu Zou, Jingyun Huang, Liping Zhu and Binghui Zhao, Thin Solid Films, Volume 458, 2004, 161-164.
  19. “Sputtering deposited ternary Zn1-xCdxO crystal films on Si(111) substrates”, D. W. Ma, Z. Z. Ye, H. M. Lu, J. Y. Huang, B. H. Zhao, L. P. Zhu, H. J. Zhang and P. M. He, Thin Solid Films, Volume 461, 2004, 250-255.
  20. “Growth of N-doped p-type ZnO films using ammonia as dopant source gas”, Jingyun Huang, Zhizhen Ye, Hanhong Chen, Binghui Zhao, Lei Wang, J. Mater. Sci. Lett., 22, (2003)249.
  21. “A novel technique to grow Ge quantum dots on porous silicon by ultrahigh vacuum chemical vapor deposition”, Jingyun Huang, Zhizhen Ye, Lei Wang, J. Mater. Sci. Lett., 21, (2002)129.
  22. “The growth of Si1-x-yGexCy alloys with high carbon content by ultrahigh vacuum chemical vapor deposition”, Jingyun Huang, Zhizhen Ye, Zhen Qi, Duanlin Que, J. Mater. Sci. Lett., 20, (2001)1173.
  23. “Effect of oxygen pressure on the c-axis oriented growth of LiNbO3 thin film on SiO2/Si substrate by pulse laser deposition”, Xinchang Wang, Junhui He, Jingyun Huang, Binghui Zhao, Zhizhen Ye, J. Mater. Sci. Lett., 22, (2003)225.
  24. “Relationship between photoluminescence and structural properties of the sputtered Zn1-xCdxO films on Si substrates”, Ma DW, Huang JY, Ye ZZ, Wang L, Zhao BH, Optical Materials 25 (4): 367-371 2004.
  25. “Synthesis and properties of ZnO films with (100) orientation by SS-CVD”, Jianguo Lu, Zhizhen Ye, Jingyun Huang, Lei Wang, Binghui Zhao, Appl. Sur. Sci., 207, (2003)295.
  26. “Effect of post-annealing treatments on the properties of Zn1-xCdxO films on glass substrate”, Ma Dewei, Ye zhizhen, Huang Jingyun, Liping Zhu, Zhao Binghui, Junhui He, Materials Science and Engineering B, 111 (2004)9-13.
  27. “P-Type conduction in Al-N co-doped ZnO films”,Yuan GD, Ye ZZ, Zhu LP, Zeng YJ, Huang JY, Qian Q, Lu JG. Materials Letter, 58 (29): 3741-3744 NOV 2004
  28. “Deposition and characteristics of CdO films with absolutely (200)-preferred orientation”, Ma Dewei, Ye zhizhen, Wang Lei, Huang Jingyun, Zhao Binghui, Materials Letter, 58 (2004)128.
  29. “p-type ZnO films deposited by DC reactive magnetron sputtering at different ammonia concentrations”, Lu JG, Zhang YZ, Ye ZZ, Wang L, Zhao BH, Huang JY, Materials Letter, 57 (2003)3311.
  30. “Doping and Growth of Thin Si Epilayer and SiGe by UHV/CVD”, Jingyun Huang, Lei Wang, Binghui Zhao, Zhizhen Ye, Haiyan Zhang, International Journal of Modern Physics B, 16, (2002)4219.
  31. “Effect of substrate temperature on the properties of Zn1-xMgxO films on silicon”, Lu Zhou, Zhizhen Ye, Jingyun Huang, Binghui Zhao, International Journal of Modern Physics B, 16:28 (2002)4255.
  32. “Ultraviolet photodetector based on GaN/Si”, Zhizhen Ye, Jingyun Huang, Xing Gu, Yu Wang, Qinghui Sao, Binghui Zhao, International Journal of Modern Physics B, 16:28 (2002)4310.
  33. “Hetero-Growth of(100) Orientation ZnO Films on Silicon by SS-CVD”, Jianguo Lu, Zhizhen Ye, Hanhong Chen, Jingyun Huang, Binghui Zhao, International Journal of Modern Physics B, 16:28 (2002)4250.
  34. “Growth and Characterization of C-oriented LiNbO3 Thin Films on Si(100) By PLD”, Xingchang Wang, Zhizhen Ye, Junhui He, Jingyun Huang, Binghui Zhao, International Journal of Modern Physics B, 16:28 (2002)4343.
  35. “Structural and optical characterization of Zn1-xCdxO thin films deposited by dc reactive magnetron sputtering”, Ma DW, Ye ZZ, Huang JY, Zhao BH, Wan SK, Sun XH, Wang ZG, Ch. Phys. Lett., 20, (2003)942.
  36. “Structural characterization and photoluminescence properties of Zn1-xMgxO films on silicon”, ZHOU Lu, YE Zhizhen, HUANG Jingyun, ZHAO Binghui, Ch. Phys. Lett., 19, (2002)1350.
  37. “Prepartion and properties of N-doped p-type ZnO films by solid-source chemical vapor deposition with the c-axis parallel to the substrate”, LU Jianguo, YE, Zhizhen, HUANG Jingyun, Ch. Phys. Lett., 19(2002)1494.
  38. “Epitaxial growth of high quality silicon on double-layer porous silicon”. HUANG Yi-ping, HUANG Jing-yun, YE Zhi-zhen, Ch. Phys, Lett., 18,(2001)1507.
  39. “Growth and Characterization of High Quality Si1-x-yGexCy Alloy Grown by Ultra-high Vacuum Chemical Vapor Deposition”, QI Zhen, HUANG Jing-yun, YE Zhi-zhen, et al., Ch. Phys. Lett., 16(10), (1999)750.
  40. “SiGe Epitaxy with Graded buffer by Ultrahigh Vacuum Chemical Vapor Deposition”, HUANG Jing-yun, YE Zhi-zhen, LU Huan-ming, et al., Ch. Phys. Lett., 15(9), (1998)692.
  41. “Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD”, Lu JG, Ye ZZ, Wang L, Huang JY, Zhao BH, Mat. Sci. in Semi. Proc. 5, (2002)491.
  42. “Structural and photoluminesenct properties of Zn1-xMgxO thin film on silicon”, Zou L, Wang L, Huang JY, Zhao BH, Ye ZZ, ACTA PHYSICA SINICA, 52, (2003) 935.

Research Highlights

  • Si, SiGe, SiGeC films and Ge quantum dots by UHV/CVD.
  • Wide gap semiconductor ZnO and GaN
  • Si/Ge branched nanowire and electronic function

Honors & Awards

  • Science and technology advanced prize of Zhejiang province 2005.
  • Excellent postgraduate students of Zhejiang province in 2000.
  • First grade of Motorola scholarship Zhejiang University in 1999.